Symbol. Parameter. Value. Unit. IRF IRFFP. VDS. Drain-source Voltage ( VGS = 0). V. VDGR. Drain-gate Voltage (RGS = 20 kΩ). V. VGS. IRF/IRFS are N-Channel enhancement mode power MOSFETs with advanced technology. These power MOSFETs are designed for low voltage. IRF STMicroelectronics MOSFET N-Ch Volt 10 Amp datasheet, inventory, & pricing.

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The maximum ratings related to soldering conditions are also marked on the inner box label. Pulsed Diode Forward Current a. Test circuit for inductive load switching and diode recovery times Figure Zero Gate Voltage Drain Current.

Thermal impedance for TO Figure 4. Copy your embed code and put on your site: The low thermal resistance. Normalized gate threshold voltage vs dagasheet Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure Repetitive Avalanche Energy a.


IRF datasheet and specification datasheet Download datasheet. Unclamped inductive waveform Figure Switching times test circuit for resistive load Figure The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry.

This datasheet is subject to change without notice. V DS Temperature Coefficient. Repetitive Avalanche Current a.

PDF IRF630 Datasheet ( Hoja de datos )

The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Gate charge test circuit Figure Download datasheet Kb Share this page. Pulse width limited by safe operating area 2.

Datashset variations Figure Body Diode Reverse Recovery Charge. The TOAB package is universally preferred for all. Unclamped Inductive load test circuit Figure Drain-Source Body Diode Characteristics. These packages have a Lead-free second level interconnect. Catasheet Intertechnology Electronic Components Datasheet.

Continuous Source-Drain Diode Current. Pulsed Drain Current a. Single Pulse Avalanche Energy b. N-channel V – 0. Repetitive rating; pulse width limited by maximum junction temperature see fig. Prev Next General features. All other trademarks are the property of their respective owners. Static drain-source on resistance Figure Case-to-Sink, Dwtasheet, Greased Surface.

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I SM p – n junction diode. View PDF for Mobile.

IRF Datasheet PDF –

Elcodis is a trademark of Elcodis Company Ltd. Body Diode Reverse Recovery Time. Contents Contents 1 Electrical ratings.

L S die contact. Electrical characteristics Figure Safe operating area for TO Figure 3. IRF datasheet and specification datasheet. Soldering Recommendations Peak Temperature.